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Package Marking and Ordering Information
Device Marking
FCP20N60
FCPF20N60
Device
FCP20N60
FCPF20N60
Package
TO-220
TO-220F
Reel Size
-
-
Tape Width
-
-
Quantity
50
50
Electrical Characteristics
T C = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
/ ? T J
BV DS
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0V, I D = 250 μ A, T J = 25 ° C
V GS = 0V, I D = 250 μ A, T J = 150 ° C
I D = 250 μ A, Referenced to 25 ° C
V GS = 0V, I D = 20A
V DS = 600V, V GS = 0V
V DS = 480V, T C = 125 ° C
V GS = 30V, V DS = 0V
V GS = -30V, V DS = 0V
600
--
--
--
--
--
--
--
--
650
0.6
700
--
--
--
--
--
--
--
--
1
10
100
-100
V
V
V/ ° C
V
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 10A
3.0
--
--
0.15
5.0
0.19
V
?
g FS
Forward Transconductance
V DS = 40V, I D = 10A
(Note 4)
--
17
--
S
Dynamic Characteristics
C iss
C oss
C rss
C oss
C oss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
V DS = 25V, V GS = 0V,
f = 1.0MHz
V DS = 480V, V GS = 0V, f = 1.0MHz
V DS = 0V to 400V, V GS = 0V
--
--
--
--
--
2370
1280
95
65
165
3080
1665
--
85
--
pF
pF
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 300V, I D = 20A
R G = 25 ?
V DS = 480V, I D = 20A
V GS = 10V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
62
140
230
65
75
13.5
36
135
290
470
140
98
18
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
20
60
A
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0V, I S = 20A
--
--
1.4
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I S = 20A
dI F /dt =100A/ μ s
(Note 4)
--
--
530
10.5
--
--
ns
μ C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I AS = 10A, V DD = 50V, R G = 25 ? , Starting T J = 25 ° C
3. I SD ≤ 20A, di/dt ≤ 200A/ μ s, V DD ≤ BV DSS , Starting T J = 25 ° C
4. Pulse Test: Pulse width ≤ 300 μ s, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FCP20N60 / FCPF20N60 Rev. A 2
2
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